Manipulated hafnia paves the way for next-generation memory devices

Scientists and engineers have been pushing for the past decade to leverage an elusive ferroelectric material called hafnium oxide, or hafnia, to usher in the next generation of computing memory. A team of researchers including the University of Rochester's Sobhit Singh published a study in the Proceedings of the National Academy of Sciences outlining progress toward making bulk ferroelectric and antiferroelectric hafnia available for use in a variety of applications.