Researchers develop high-performance heterojunction pn diodes 0 27.12.2024 15:45 Phys.org A research team has developed high-performance diamond/ε-Ga2O3 heterojunction pn diodes based on ultrawide bandgap semiconductors, achieving breakdown voltages exceeding 3 kV. This work was published in Nano Letters. Moscow.media Частные объявления сегодня Rss.plus Все новости за 24 часа
